inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc silicon npn power transistor 2SC3994 description high switching speed high breakdown voltage- : v (br)cbo = 1100v(min) applications designed for horizontal deflection output applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base v oltage 1100 v v ceo collector-emitter v oltage 800 v v ebo emitter-base voltage 7 v i c collector current-continuous 25 a i cm collector current-pulse 60 a p c collector power dissipation @ t c =25 300 w t j junction temperature 150 t stg storage temperature range -55~150
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc silicon npn power transistor 2SC3994 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 10ma; i b = 0 800 v v ce (sat) collector-emitter saturation voltage i c = 12a; i b =2.4a 2.0 v v be (sat) base-emitter saturation voltage i c = 12a; i b =2.4a 1.5 v i cbo collector cutoff current v cb = 800v; i e = 0 10 a i ebo emitter cutoff current v eb = 5v; i c = 0 10 a h fe-1 dc current gain i c = 1.6a; v ce = 5v 10 60 h fe-2 dc current gain i c = 8a; v ce = 5v 8 t stg storage time v cc =400v,5i b1 =-2.5i b2 =i c =20 a,r l =20 3.0 s t f fall time 0.3 s
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